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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD526 DESCRIPTION With TO-220C package Complement to type 2SB596 Good linearity of hFE APPLICATIONS Power amplifier applications Recommend for 20 25W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 80 Collector-base voltage Open emitter Collector-emitter voltage Open base 80 5 4 0.4 TC=25ae 30 150 -55~150 Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Open collector Emitter UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=50mA; IB=0 IC=3 A;IB=0.3 A IC=3A ; VCE=5V VCB=80V ;IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=5V 40 15 8 MIN 80 TYP. 2SD526 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB MAX UNIT V 1.5 1.5 30 100 240 |I |I V V A A hFE-1 classifications R 40-80 O TOR NDU ICO E SEM ANG INCH Output capacitance IE=0; VCB=10V;f=1MHz 90 MHz pF Y 70-140 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD526 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD526 TOR NDU ICO E SEM ANG INCH 4 |
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